IPD082N10N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPD082N10N3 G
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 125 W 100 V Continuous Drain Current (ID):80 A 55 nC
| Parameter | Value |
|---|---|
| Gate Charge | 55 nC |
| Gate to Source Threshold Voltage | 2 V |
| Continuous Drain Current (ID) | 80 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7 mΩ |
| Input capacitance | 2.99 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 125 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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